Ni silicide study at the atomic scale: Diffusing species, relaxation and grooving mechanisms. (15th January 2015)

• Record Type: Journal Article
• Authors: El Kousseifi, M.; Hoummada, K.; Mangelinck, D.
• Is Part Of: Acta materialia. Volume 83(2015)
• Page Start: 488
• Page End: 498
• Publication Date: 2015-01-15
• Subjects: Ni silicide formation -- Marker experiments -- Atom probe tomography -- Stress relaxation -- Morphological degradation; Materials -- Periodicals; Materials science -- Periodicals; Materials -- Mechanical properties -- Periodicals; Metallurgy -- Periodicals; Chemistry, Inorganic -- Periodicals; 620.112
• DOI: 10.1016/j.actamat.2014.10.029
• Languages: English
• ISSNs: 1359-6454

Abstract

Graphical abstract: Abstract: A thin layer of Ge (1 nm) deposited between a 30 nm Ni film and a (100)Si substrate was used as a marker for the diffusing species during Ni silicide formation. In situ X-ray diffraction heat treatments with temperatures ranging from 150 to 400 °C were performed to show the specific steps of silicide formation. Atom probe tomography (APT) enabled the diffusing species during the Ni deposition and during the formation of δ-Ni2 Si and NiSi phases to be determined. APT measurements of the redistribution of Ge during the stress relaxation of δ-Ni2 Si and during the formation of NiSi highlighted the mechanisms of stress relaxation and morphological degradation of NiSi.