Effect of n doped amorphous layer between microcrystalline i/n layer on the performance of micromorph tandem solar cells. Issue 1771 (2015)

• Record Type: Journal Article
• Authors: Yang, Jingjing; Li, Tingkai; Tan, Xueshi; Zhang, Feng; Mao, Bingxue
• Editors: Gloeckler, M.; Tiwari, A.N.; Yamada, A.; Yan, Y.; Kim, J.Y.; Miyasaka, T.; Mora-Seró, I.; Zhu, K.; Andersson, M.; Manca, J.V.; Palomares, E.; Vandewal, K.; Li, T.; Mastro, M.; Tao, M.; Wang, Q.
• Is Part Of: MRS proceedings. Issue 1771(2015)
• Page Start: 9
• Page End: 15
• Publication Date: 2015
• Subjects: plasma-enhanced CVD (PECVD) (deposition), -- microstructure, -- amorphous; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.359
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: Pin/pin "micromorph" tandem solar cells were manufactured by the industrial production line of Hunan Gongchuang PV Science & Technology Co., Ltd. Based on this kind of solar cells, a n-doped amorphous silicon layer deposited by plasma enhanced chemical vapor deposition technique (PECVD) was inserted between the microcrystalline silicon intrinsic layer and n-doped layer. The result showed that the introduced n-type amorphous silicon layer well improved the solar cells performance by reducing the bad effects caused by microcrystalline silicon growth defects. Compared with the solar cells without inserting the n-doped amorphous silicon layer, the open voltage and efficiency increased remarkably. When the thickness of n-doped amorphous silicon layer is 8nm, the open voltage increased from 72.9V to 73.6V and efficiency increased from 10.63% to 10.74%.