A Comprehensive Study of Effect of Composition on Resistive Switching of HfxAl1-xOy based RRAM devices by Combinatorial Sputtering. Issue 1729 (2015)

• Record Type: Journal Article
• Authors: Kumbhare, Pankaj; Meihar, Paritosh; Rajarathinam, Senthilkumar; Chouhan, Shikhar; Pai, Suhit; Panwar, Neeraj; Ganguly, U.
• Editors: Dimitrakis, P.; Fujisaki, Y.; Hu, G.; Tokumitsu, E.
• Is Part Of: MRS proceedings. Issue 1729:(2015)
• Page Start: 65
• Page End: 70
• Publication Date: 2015
• Subjects: sputtering, -- physical vapor deposition (PVD), -- x-ray photoelectron spectroscopy (XPS); Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.82
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: We use the combinatorial sputter technique to simultaneously sputter HfO2 and Al2 O3 targets to obtain a film of Hfx Al1-x Oy of specific compositions. The effect of oxide thickness, oxide composition (i.e. Hf:Al ratio) and oxygen gettering layer thickness on DC sweep based resistive switching performance of RRAM is investigated. The oxide thickness primarily affects forming voltage and causes the memory window to increase for the thinnest oxide (6 nm, other thicknesses – 12 nm, 18 nm). The composition of oxide has a non-linear effect on the memory window (high to low resistance ratio) and variability of resistance states whereas the variability of set voltage improves significantly for ternary oxide compared to individual binary oxides. Finally, electrode interlayer for oxygen-gettering is also critical where a thin Ti layer of 1.5nm maintains the memory window but reduces variability in HRS, LRS, reduces Vset and Vreset and improves the variability in Vset .