XRD analysis of TRAM composed from [Sb2Te3/GeTe] superlattice film and its switching characteristics. Issue 1729 (2015)

• Record Type: Journal Article
• Authors: Ohyanagi, T.; Kitamura, M.; Kato, S.; Araidai, M.; Takaura, N.; Shiraishi, K.
• Editors: Dimitrakis, P.; Fujisaki, Y.; Hu, G.; Tokumitsu, E.
• Is Part Of: MRS proceedings. Issue 1729:(2015)
• Page Start: 41
• Page End: 45
• Publication Date: 2015
• Subjects: memory, -- sputtering, -- x-ray diffraction (XRD); Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.170
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: We studied GeTe structures in topological switching random access memories (TRAMs) with a [GeTe/Sb2 Te3 ] superlattice by using X-ray diffraction (XRD) analysis. We examined the electrical characteristics of the TRAMs deposited at different temperatures. We found that XRD spectra differed between the films deposited at 200 and 240°C and that the differences corresponded to the differences in the GeTe sequences in the films.