Perpendicular Magnetic Anisotropy on W-based Spin-Orbit Torque CoFeB | MgO MRAM Stacks. Issue 1729 (2015)

• Record Type: Journal Article
• Authors: Kaidatzis, Andreas; Psycharis, Vasileios; García-Martín, José Miguel; Bran, Cristina; Vázquez, Manuel; Niarchos, Dimitrios
• Editors: Dimitrakis, P.; Fujisaki, Y.; Hu, G.; Tokumitsu, E.
• Is Part Of: MRS proceedings. Issue 1729:(2015)
• Page Start: 73
• Page End: 78
• Publication Date: 2015
• Subjects: magnetic properties, -- memory, -- sputtering; Electrical engineering -- Congresses; Physics -- Congresses; Materials -- Research -- Congresses; Materials science -- Congresses; 620.11
• DOI: 10.1557/opl.2015.191
• Languages: English
• ISSNs: 0272-9172

Abstract

ABSTRACT: We study W | Ta | CoFeB | MgO stacks for spin-orbit torque MRAM applications. A strong perpendicular magnetic anisotropy is obtained after annealing for CoFeB layer thickness of 0.9 nm or 1.2 nm and for specific W/Ta ratios, were the Ta layer thickness is between 0.3 nm and 1 nm. Furthermore, the desired high-spin orbit coupling β-phase of W is preserved even after annealing at 350 ° C. We argue that an efficient B getter, like Ta, is necessary for the coherent crystallization of the CoFeB | MgO interface that allows for the establishment of perpendicular magnetic anisotropy.