Cite
HARVARD Citation
Cabré, R. et al. (2018). Accurate semi empirical predictive model for doped and undoped double gate MOSFET. Solid-state electronics. pp. 23-31. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Cabré, R. et al. (2018). Accurate semi empirical predictive model for doped and undoped double gate MOSFET. Solid-state electronics. pp. 23-31. [Online].