Effect of nitridation on structure, electrical and optical properties of InN epilayers grown on sapphire by PAMBE. (January 2015)

• Record Type: Journal Article
• Authors: Zhao, Yang; Wang, Hui; Wu, Guoguang; Jing, Qiang; Gao, Fubin; Li, Wancheng; Zhang, Baolin; Du, Guotong
• Is Part Of: Vacuum. Volume 111(2015)
• Page Start: 15
• Page End: 18
• Publication Date: 2015-01
• Subjects: Indium nitride -- PAMBE -- Nitridation -- Photoluminescence; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2014.09.014
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: InN epilayers were prepared on c -plane (0001) sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). We studied the effect of nitridation on structure, surface morphology, electrical and optical properties of InN films using X-ray diffraction (XRD), Reflection high-energy electron diffraction (RHEED), scanning electron microscopy (SEM), atomic force microscopy (AFM), Hall and photoluminescence (PL) measurement. The results showed a significant improvement of the crystalline qualities and surface morphologies and enhancement of the electrical and optical properties for InN films grown after nitridation. Moreover, the energy band-gap of InN films were also determined by optical absorption and photoluminescence (PL) measurement. Highlights: InN epilayers were prepared on c -plane (0001) sapphire substrates by plasma-assisted MBE. The nitridation of the substrate impacted the qualities of InN flims. The energy band-gap of InN layers were found to be around 0.75–0.80 eV.