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HARVARD Citation
Gaska, R. et al. (2015). Novel AlInN/GaN integrated circuits operating up to 500 °C. Solid-state electronics. pp. 22-27. [Online].
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Gaska, R. et al. (2015). Novel AlInN/GaN integrated circuits operating up to 500 °C. Solid-state electronics. pp. 22-27. [Online].