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HARVARD Citation
Wu, T. et al. (2015). Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. Solid-state electronics. pp. 127-130. [Online].
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Wu, T. et al. (2015). Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics. Solid-state electronics. pp. 127-130. [Online].