Cite
HARVARD Citation
Ning, S. et al. (2015). 50 nm AlxOy ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset. Solid-state electronics. pp. 64-72. [Online].
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Ning, S. et al. (2015). 50 nm AlxOy ReRAM program 31% energy, 1.6× endurance, and 3.6× speed improvement by advanced cell condition adaptive verify-reset. Solid-state electronics. pp. 64-72. [Online].