Origin of broad band emissions of 3C-silicon carbide nanowire by temperature and time resolved photoluminence study. (February 2015)

• Record Type: Journal Article
• Authors: Lee, K.M.; Hwang, J.Y.; Urban, B.; Singh, A.; Neogi, A.; Lee, S.K.; Choi, T.Y.
• Is Part Of: Solid state communications. Volume 204(2015)
• Page Start: 16
• Page End: 18
• Publication Date: 2015-02
• Subjects: 3C-SiC nanowire -- High energy emissions from oxide layers -- Temperature dependent photoluminescence -- Time-resolved photoluminescence; Solid state chemistry -- Periodicals; Solid state physics -- Periodicals; Chimie de l'état solide -- Périodiques; Physique de l'état solide -- Périodiques; 530.41
• DOI: 10.1016/j.ssc.2014.11.020
• Languages: English
• ISSNs: 0038-1098

Abstract

Abstract: As-grown by chemical vapor deposition (CVD) technique, 3C-silicon carbide (3C-SiC) nanowires (NWs) were studied for their energy states by photonic interactions. Temperature dependent photoluminescence (TDPL) was employed in the study. High energy emissions in UV range were found. In order to better understand origins of the high energy emissions, a time resolved photoluminescence (TRPL) study was executed to manifest the nature of these high energy emissions. Observation with high resolution transmission electron microscopy (HRTEM) confirmed the UV emissions were due to the oxide formed on the outer surface of the NWs. Highlights: Temperature dependent PL and time-resolved PL were conducted concurrently to study. Highly blue shifted energy peaks were found. HRTEM and EDS were employed to investigate a structural evidence of high energy peaks. A greatly reduced PL lifetime was found to reveal origin of the high energy peaks.