Growth of Graphene from C/Co/SiO2/Si Structure. (2016)
- Record Type:
- Journal Article
- Title:
- Growth of Graphene from C/Co/SiO2/Si Structure. (2016)
- Main Title:
- Growth of Graphene from C/Co/SiO2/Si Structure
- Authors:
- Machac, Petr
Blahova, Veronika
Cichon, Stanislav - Abstract:
- Abstract: This paper deals with preparation of graphene using so-called transfer-free method. Graphene layers have been prepared from the structures C/Co/SiO2 /Si together with several modifications. The said method has been used to prepare bi-layer graphene, which can be for example used for construction of unipolar transistors.
- Is Part Of:
- Materials today. Volume 3(2016)Supplement 2
- Journal:
- Materials today
- Issue:
- Volume 3(2016)Supplement 2
- Issue Display:
- Volume 3, Issue 2 (2016)
- Year:
- 2016
- Volume:
- 3
- Issue:
- 2
- Issue Sort Value:
- 2016-0003-0002-0000
- Page Start:
- S203
- Page End:
- S208
- Publication Date:
- 2016
- Subjects:
- Graphene -- cobal -- transfer-free method -- Raman spectroscopy
Materials science -- Congresses -- Periodicals
620.1 - Journal URLs:
- http://www.sciencedirect.com/science/journal/22147853 ↗
http://www.sciencedirect.com/ ↗ - DOI:
- 10.1016/j.matpr.2016.02.034 ↗
- Languages:
- English
- ISSNs:
- 2214-7853
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 7277.xml