Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors. (July 2015)

• Record Type: Journal Article
• Authors: Xu, Feng; Liu, Ao; Liu, Guoxia; Shin, Byoungchul; Shan, Fukai
• Is Part Of: Ceramics international. Volume 41(2015)Supplement 1
• Page Start: S337
• Page End: S343
• Publication Date: 2015-07
• Subjects: Yttrium oxide -- Solution process -- Indium zinc oxide -- Thin film transistor; Ceramics -- Periodicals; Céramique industrielle -- Périodiques; Ceramics; Periodicals; Electronic journals; 666
• DOI: 10.1016/j.ceramint.2015.03.120
• Languages: English
• ISSNs: 0272-8842

Abstract

Abstract: In this paper, we report the annealing effects on the micro-structure and the electrical properties of sol–gel-derived Y2 O3 thin films and further impact on the InZnO thin film transistors (IZO TFTs). The Y2 O3 thin films annealed at 400 °C showed a low current density of ~10 −8 A/cm 2 at an applied voltage of 1 V. A relative high capacitance density of 345.7 nF/cm 2, measured at 1 kHz, was obtained for same Y2 O3 capacitor. Based on its potential as the dielectric layer, IZO TFTs exhibited a high field effect mobility of 20.93 cm 2 /Vs, an acceptable subthreshold swing of 0.67 V/decade, and a reasonable Ion /Ioff ratio of 1.2×10 6 . Our results demonstrate that solution-processed Y2 O3 thin film is a promising gate dielectric candidate for high-performance oxide TFT.