Borosilicate spray-on glass solutions for fabrication silicon solar cell back surface field. Issue 3 (2nd July 2018)
- Record Type:
- Journal Article
- Title:
- Borosilicate spray-on glass solutions for fabrication silicon solar cell back surface field. Issue 3 (2nd July 2018)
- Main Title:
- Borosilicate spray-on glass solutions for fabrication silicon solar cell back surface field
- Authors:
- Filipowski, Wojciech
Drabczyk, Kazimierz
Wróbel, Edyta
Sobik, Piotr
Waczynski, Krzysztof
Waczynska-Niemiec, Natalia - Abstract:
- Abstract : Purpose: The purpose of this paper is to develop a method of preparing spray-on dopant solutions that enable obtaining a p+ region forming a back-surface field (BSF) during the diffusion doping process. The spray-on method used allows to decrease the costs of dopant solution application, which is particularly significant for new low-cost production processes. Design/methodology/approach: This paper presents steps of production of high concentration boron dopant solutions enabling diffusion doping of crystalline p-type silicon surfaces. To check the fabricated dopant solutions for stability and suitability for spray-on application, their viscosity and density were measured in week-long intervals. The dopant solutions described in this paper were used in a series of diffusion doping processes to confirm their suitability for BSF production. Findings: A method of preparing dopant solutions with parameters enabling depositing them on silicon wafers by the spray-on method has been established. Due to hygroscopic properties of the researched dopant solutions, a maximum surrounding atmosphere humidity has been established. The solutions should not be applied by the spray-on method, if this humidity value is exceeded. The conducted derivatographic examination enabled establishing optimal drying conditions. Originality/value: The paper presents a new composition of a dopant solution which contains high concentration of boron and may be applied by the spray-on method.Abstract : Purpose: The purpose of this paper is to develop a method of preparing spray-on dopant solutions that enable obtaining a p+ region forming a back-surface field (BSF) during the diffusion doping process. The spray-on method used allows to decrease the costs of dopant solution application, which is particularly significant for new low-cost production processes. Design/methodology/approach: This paper presents steps of production of high concentration boron dopant solutions enabling diffusion doping of crystalline p-type silicon surfaces. To check the fabricated dopant solutions for stability and suitability for spray-on application, their viscosity and density were measured in week-long intervals. The dopant solutions described in this paper were used in a series of diffusion doping processes to confirm their suitability for BSF production. Findings: A method of preparing dopant solutions with parameters enabling depositing them on silicon wafers by the spray-on method has been established. Due to hygroscopic properties of the researched dopant solutions, a maximum surrounding atmosphere humidity has been established. The solutions should not be applied by the spray-on method, if this humidity value is exceeded. The conducted derivatographic examination enabled establishing optimal drying conditions. Originality/value: The paper presents a new composition of a dopant solution which contains high concentration of boron and may be applied by the spray-on method. Derivatographic examination results, as well as equations describing the relation between dopant solution density and viscosity and storage time are also original for this research. The established dependencies between the sheet resistance of the fabricated BSF and the diffusion doping time are other new elements described in the paper. … (more)
- Is Part Of:
- Microelectronics international. Volume 35:Issue 3(2018)
- Journal:
- Microelectronics international
- Issue:
- Volume 35:Issue 3(2018)
- Issue Display:
- Volume 35, Issue 3 (2018)
- Year:
- 2018
- Volume:
- 35
- Issue:
- 3
- Issue Sort Value:
- 2018-0035-0003-0000
- Page Start:
- 172
- Page End:
- 176
- Publication Date:
- 2018-07-02
- Subjects:
- Back-surface field -- Diffusion process -- Dopant sources -- Silicon solar cells
Microelectronics -- Periodicals
621.381 - Journal URLs:
- http://info.emeraldinsight.com/products/journals/journals.htm?PHPSESSID=1turhlb3hk8vmsfsbt4nv991s5&id=mi ↗
http://info.emeraldinsight.com/products/journals/journals.htm?id=mi ↗
http://www.emeraldinsight.com/ ↗ - DOI:
- 10.1108/MI-12-2017-0075 ↗
- Languages:
- English
- ISSNs:
- 1356-5362
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5758.971000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 7220.xml