Bandgap scaling and negative differential resistance behavior of zigzag phosphorene antidot nanoribbons (ZPANRs). Issue 21 (21st May 2018)

• Record Type: Journal Article
• Authors: Carmel, Santhia; Pon, Adhithan; Meenakshisundaram, N.; Ramesh, R.; Bhattacharyya, Arkaprava
• Is Part Of: Physical chemistry chemical physics. Volume 20:Issue 21(2018)
• Page Start: 14855
• Page End: 14863
• Publication Date: 2018-05-21
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c8cp01435c
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Negative differential resistance behaviour in zigzag antidot phosphorene nanoribbons. Abstract : This work examines the prospect of phosphorene antidot nanoribbons (PANRs) using the density functional based tight binding (DFTB) method. Horizontally perforated PANRs with both armchair (A) and zigzag (Z) configurations were considered for electrical simulations. Our simulation results found that the APANRs cannot be scaled down with nanoribbon width, whereas ZPANRs can be scaled easily. Bandgap scaling in terms of ribbon width, length and antidot number was thoroughly analyzed for ZPANRs. In the end, a two-terminal device was constructed and transmission analysis was performed using the non-equilibrium Green's function (NEGF) methodology. A negative differential resistance (NDR) region appeared in the current–voltage characteristics of the ZPANRs, which paved a pathway for nano-device application.