Facile silane functionalization of graphene oxide. Issue 34 (20th August 2018)

• Record Type: Journal Article
• Authors: Abbas, Syeda S.; Rees, Gregory J.; Kelly, Nicole L.; Dancer, Claire E. J.; Hanna, John V.; McNally, Tony
• Is Part Of: Nanoscale. Volume 10:Issue 34(2018)
• Page Start: 16231
• Page End: 16242
• Publication Date: 2018-08-20
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c8nr04781b
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : The facile silane functionalization of graphene oxide (GO) was achieved yielding vinyltrimethoxysilane-reduced graphene oxide (VTMOS-rGO) nanospheres located in the inter-layer spacing between rGO sheets via an acid–base reaction using aqueous media. Abstract : The facile silane functionalization of graphene oxide (GO) was achieved yielding vinyltrimethoxysilane-reduced graphene oxide (VTMOS-rGO) nanospheres located in the inter-layer spacing between rGO sheets via an acid–base reaction using aqueous media. The successful grafting of the silane agent with pendant vinyl groups to rGO was confirmed by a combination of Fourier-transform infrared (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The structure and speciation of the silane-graphene network (nanosphere) and, the presence of free vinyl groups was verified from solid-state magic angle spinning (MAS) and solution 13 C and 29 Si nuclear magnetic resonance (NMR) measurements. Evidence from Scanning Electron Microscopy (SEM), High-Resolution Transmission Electron Microscopy (HRTEM) and TEM-High-Angle Annular Dark-Field (TEM-HAADF) imaging showed that these silane networks aided the exfoliation of the rGO layers preventing agglomeration, the interlayer spacing increased by 10 Å. The thermal stability (TGA/DTA) of VTMOS-rGO was significantly improved relative to GO, displaying just one degradation process for the silane network some 300 °C higher than either VTMOS or GO alone. The reduction of GO to VTMOS-rGO induced sp 2 hybridization and enhanced the electrical conductivity of GO by 10 5 S m −1 .