Analysis of in-plane thermal phonon transport in III–V compound semiconductor superlattices. Issue 3 (3rd July 2018)

• Record Type: Journal Article
• Authors: Kothari, Kartik; Maldovan, Martin
• Is Part Of: Nanoscale and microscale thermophysical engineering. Volume 22:Issue 3(2018)
• Page Start: 239
• Page End: 253
• Publication Date: 2018-07-03
• Subjects: Thermal transport -- nanostructures -- III-V semiconductor superlattices; Heat -- Transmission -- Periodicals; Heat -- Transmission; Electronic journals; Periodicals; 621.402
• DOI: 10.1080/15567265.2018.1486929
• Languages: English
• ISSNs: 1556-7265

Abstract

ABSTRACT: Controlling thermal transport in optoelectronic devices is a fundamental determinant of optimum performance. We study in-plane thermal transport mechanisms in GaAs/AlAs and their alloy-based superlattices while rigorously accounting for phonon interlayer coupling and interface scattering. We provide an extensive microscopic analysis of phonon transport to enable rational thermal material design. We also predict the thermal conductivity of realistic finite-sized GaAs/AlAs superlattices for efficient heat control in III–V superlattice-based optoelectronic devices.