Stable n-type doping of graphene via high-molecular-weight ethylene amines. Issue 44 (23rd October 2015)

• Record Type: Journal Article
• Authors: Jo, Insu; Kim, Youngsoo; Moon, Joonhee; Park, Subeom; Moon, Jin San; Park, Won Bae; Lee, Jeong Soo; Hong, Byung Hee
• Is Part Of: Physical chemistry chemical physics. Volume 17:Issue 44(2015)
• Page Start: 29492
• Page End: 29495
• Publication Date: 2015-10-23
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c5cp03196f
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : We demonstrate a stable and strong n-type doping method to tune the electrical properties of graphene via vapor phase chemical doping with various high-molecular-weight ethylene amines. Abstract : We demonstrate a stable and strong n-type doping method to tune the electrical properties of graphene via vapor phase chemical doping with various high-molecular-weight ethylene amines. The resulting carrier concentration after doping with pentaethylenehexamine (PEHA) is as high as −1.01 × 10 13 cm −2, which reduces the sheet resistance of graphene by up to ∼400% compared to pristine graphene. Our study suggests that the branched structure of the dopant molecules is another important factor that determines the actual doping degree of graphene.