Effect of thermal treatment on ZnO:Tb3+ nano-crystalline thin films and application for spectral conversion in inverted organic solar cells. Issue 51 (17th August 2018)

• Record Type: Journal Article
• Authors: Otieno, Francis; Airo, Mildred; Erasmus, Rudolph M.; Billing, David G.; Quandt, Alexander; Wamwangi, Daniel
• Is Part Of: RSC advances. Volume 8:Issue 51(2018)
• Page Start: 29274
• Page End: 29282
• Publication Date: 2018-08-17
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c8ra04398a
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Thermal annealing of Tb doped ZnO thin films was undertaken and as proof of concept, pristine films were used as a bi-functional in inverted solar cell devices. Abstract : Down conversion has been applied to minimize thermalization losses in photovoltaic devices. In this study, terbium-doped ZnO (ZnO:Tb 3+ ) thin films were deposited on ITO-coated glass, quartz and silicon substrates using the RF magnetron sputtering technique fitted with a high-purity (99.99%) Tb 3+ -doped ZnO target (97% ZnO, 3% Tb) for use in organic solar cells as a bi-functional layer. A systematic study of the film crystallization dynamics was carried out through elevated temperature annealing in Ar ambient. The films were characterized using grazing incidence (XRD), Rutherford backscattering spectrometry (RBS), atomic force microscopy, and UV-visible transmittance and photoluminescence measurements at an excitation wavelength of 244 nm. The tunability of size and bandgap of ZnO:Tb 3+ nanocrystals with annealing exhibited quantum confinement effects, which enabled the control of emission characteristics in ZnO:Tb 3+ . Energy transfer of ZnO → Tb 3+ ( 5 D3 – 7 F5 ) was also observed from the photoluminescence (PL) spectra. At an inter-band resonance excitation of around 300–400 nm, a typical emission band from Tb 3+ was obtained. The ZnO:Tb 3+ materials grown on ITO-coated glass were then used as bi-functional layers in an organic solar cell based on P3HT:PCBM blend, serving as active layers in an inverted device structure. Energy transfer through down conversion between ZnO and Tb 3+ led to enhanced absorption in P3HT:PCBM in the 300–400 nm range and subsequently augmented J sc of a Tb 3+ -based device by 17%.