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HARVARD Citation
Liu, J. et al. (2018). An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics. Nanotechnology. p. . [Online].
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Liu, J. et al. (2018). An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics. Nanotechnology. p. . [Online].