Charge Transfer Doping Modulated Raman Scattering and Enhanced Stability of Black Phosphorus Quantum Dots on a ZnO Nanorod. Issue 15 (18th May 2018) - Hu, Liang
Abstract: Black phosphorus (BP) has recently triggered an unprecedented interest in the 2D community. However, many of its unique properties are not exploited and the well‐known environmental vulnerability is not conquered. Herein, a type‐I mixed‐dimensional (0D‐1D) van der Waals heterojunction is developed, where three‐atomic‐layer BP quantum dots (QDs) are assembled on a single ZnO nanorod (NR). By adjusting the indium (In) content in ZnO NRs, the degree and even the direction of surface charge transfer doping within the heterojunction can be tuned, which result in selective Raman scattering enhancements between ZnO and BP. The maximal enhancement factor is determined as 4340 for BP QDs with sub‐ppm level. Furthermore, an unexpected long‐term ambient stability (more than six months) of BP QDs is revealed, which is ascribed to the electron doping from ZnO:In NRs. The first demonstration of selective Raman enhancements between two inorganic semiconductors as well as the improved stability of BP shed light on this emerging 2D material. Abstract : Solvated black phosphorus quantum dots are out‐of‐plane assembled onto single ZnO nanorod. Selectively enhanced Raman scattering can be realized by tuning electron doping induced competitive interface dipole interactions. This mixed van der Waals heterojunction endows such a system with more superb ambient stability.