P‐19: Effect of RTP Annealing Using UV and DUV Light on the Properties of the Al‐IZTO TFTs. Issue 1 (30th May 2018)

• Record Type: Journal Article
• Authors: Nam, Yunyong; Yang, Jong-Heon; Jeong, Pilseong; Kwon, Oh-Sang; Pi, Jae-Eun; Kim, Hee-Ok; Cho, Sung Haeng; Hwang, Chi-Sun; Ji, Sanghyun; Park, Sang-Hee Ko
• Is Part Of: Digest of technical papers. Volume 49:Issue 1(2018)
• Page Start: 1249
• Page End: 1251
• Publication Date: 2018-05-30
• Subjects: Oxide thin film transistor -- Rapid thermal process (RTP) -- UV and DUV annealing effect; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.12137
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : In the oxide thin film transistors (TFTs), annealing process is necessary to improve its electrical properties, and generally performed by a furnace and an oven. Compared with them, rapid thermal process (RTP) can serve several advantages including much reduced process time and improved uniformity, which are more important factors in mass‐production industry. In addition to near‐infrared (NIR) lamp, generally used as a heat source, ultra‐violet (UV) and deep‐ultra‐violet (DUV) light sources can also be used in RTP system, and they can provide much higher energy, giving the possibility of more effective and efficient annealing. Herein, we studied the annealing effect of RTP system utilizing UV and DUV light source on the electrical properties of back‐channel etched aluminum‐doped indium zinc tin oxide thin film transistors (Al‐IZTO BCE TFTs).