Atomic Layer Deposition: Effect of Various Oxidants on Reaction Mechanisms, Self‐Limiting Natures and Structural Characteristics of Al2O3 Films Grown by Atomic Layer Deposition (Adv. Mater. Interfaces 14/2018). Issue 14 (23rd July 2018)

• Record Type: Journal Article
• Authors: Wang, Haoran; Liu, Yunfei; Liu, Hui; Chen, Zheng; Xiong, Pengpeng; Xu, Xiangchen; Chen, Fangyi; Li, Kun; Duan, Yu
• Is Part Of: Advanced materials interfaces. Volume 5:Issue 14(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-07-23
• Subjects: atomic layer deposition -- oxidant sources -- quadrupole mass spectrometry -- quartz crystal microbalance -- self‐limiting natures; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201870070
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : The reaction of atomic layer deposition (ALD) is a self‐limiting process, however, it is difficult to determine the reaction degree, because each oxidant has their own reaction router and different surface absorption coefficient. In article number1701248, Haoran Wang, Yu Duan and co‐workers describe an easy method to judge the reaction process of ALD by characterized the mean squared coefficient of mass increments for each cycle.