P‐21: Three‐Mask Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for High‐Resolution AMOLED Application. Issue 1 (30th May 2018)

• Record Type: Journal Article
• Authors: Li, Jiapeng; Lu, Lei; Xia, Zhihe; Wang, Sisi; Feng, Zhuoqun; Kwok, Hoi-Sing; Wong, Man
• Is Part Of: Digest of technical papers. Volume 49:Issue 1(2018)
• Page Start: 1256
• Page End: 1259
• Publication Date: 2018-05-30
• Subjects: Elevated-Metal Metal Oxide (EMMO) -- Indium-gallium-zinc oxide (IGZO) -- Thin-film transistor (TFT) -- Three-Mask -- Edge-Transistor; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.12139
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Incorporated with the self‐aligned definition of the active island, a one‐mask‐reduced elevated‐metal metal‐oxide (EMMO) thin‐film transistor (TFT) with thermally‐induced source/drain regions was proposed for high‐resolution AMOLED application. Such three‐mask EMMO TFT combines the advantages of small device footprint, low manufacture cost, reduced overlap parasitic capacitance and good device characteristics.