50‐3: Formation of Source and Drain Regions in Top‐Gate Self‐Aligned Oxide Semiconductor Field‐Effect Transistor. Issue 1 (30th May 2018)

• Record Type: Journal Article
• Authors: Okazaki, Kenichi; Obonai, Toshimitsu; Shima, Yukinori; Yasumoto, Seiji; Koezuka, Junichi; Ishihara, Noritaka; Kurosawa, Yoichi; Yamazaki, Shunpei
• Is Part Of: Digest of technical papers. Volume 49:Issue 1(2018)
• Page Start: 660
• Page End: 663
• Publication Date: 2018-05-30
• Subjects: TGSA -- OS FET -- short channel length -- formation method of S-D regions -- CAAC; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.12333
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Formation of source and drain regions in a top‐gate self‐aligned field‐effect transistor and its mechanism were examined. A stack structure of silicon nitride and an oxide semiconductor (OS) is effective, and hydrogen trapped in oxygen vacancies in the OS and the presence of metallic indium at the interface are important.