P‐127: Dual‐Gate Self‐Aligned IGZO TFTs Monolithically Integrated with High‐Temperature Bottom Moisture Barrier for Flexible AMOLED. Issue 1 (30th May 2018)

• Record Type: Journal Article
• Authors: Kronemeijer, Auke Jisk; Akkerman, Hylke; van der Steen, Jan-Laurens; Steudel, Soeren; Pendyala, Raghu; Panditha, Pradeep; Bel, Thijs; van Diesen, Karin; de Haas, Gerard; Maas, Joris; de Riet, Joris; Rovers, Madelon; Verbeek, Roy; Nag, Manoj; Verschueren, Lynn; Genoe, Jan; Dehaene, Wim; Lu, Ya-Ju; Chiang, Shin-Chuan; Huang, Yen-Yu; Yeh, Ming-Hua; Gelinck, Gerwin
• Is Part Of: Digest of technical papers. Volume 49:Issue 1(2018)
• Page Start: 1577
• Page End: 1580
• Publication Date: 2018-05-30
• Subjects: Self-aligned dual-gate TFT -- Metal-oxide semiconductors -- High Temperature Moisture Barrier -- Flexible AMOLED Displays; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.12311
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We present a 350°C self‐aligned dual‐gate a‐IGZO backplane technology with a monolithically integrated multi‐layer high‐temperature thin‐film barrier for flexible AMOLED. Thin‐film barrier properties and TFT technology are optimized on 320 x 352mm substrates, and demonstrated in a flexible QQVGA 100 ppi AMOLED display prototype.