Interface engineering and solid-state organization for triindole-based p-type organic thin-film transistors. Issue 26 (21st June 2018)

• Record Type: Journal Article
• Authors: Reig, Marta; Bagdziunas, Gintautas; Ramanavicius, Arunas; Puigdollers, Joaquim; Velasco, Dolores
• Is Part Of: Physical chemistry chemical physics. Volume 20:Issue 26(2018)
• Page Start: 17889
• Page End: 17898
• Publication Date: 2018-06-21
• Subjects: Chemistry, Physical and theoretical -- Periodicals; 541.3
• DOI: 10.1039/c8cp02963f
• Languages: English
• ISSNs: 1463-9076

Abstract

Abstract : Role of the solid-state organization of the semiconductor and of its interface with the dielectric on the OTFT performance. Abstract : Inspired by the excellent device performance of triindole-based semiconductors in electronic and optoelectronic devices, the relationship between the solid-state organization and the charge-transporting properties of an easily accessible series of triindole derivatives is reported herein. The vacuum-evaporated organic thin-film transistors (OTFTs) exhibited a non ideal behaviour with a double slope in the saturation curves. Moreover, the treatment of the gate insulator of the OTFT device with either a self-assembled monolayer (SAM) or a polymer controls the molecular growth and the film morphology of the semiconducting layer, as shown by X-ray diffraction (XRD) analyses, atomic force microscopy (AFM) and theoretical calculations. N -Trihexyltriindole exhibited the best device performance with hole mobilities up to 0.1 cm 2 V −1 s −1 at the low V G range and up to 0.01 cm 2 V −1 s −1 at high V G, as well as enhanced I on / I off ratios of around 10 6 . The results suggest that the non-ideal behaviour of the here studied OTFT devices could be related to the higher interfacial disorder in comparison to that in the bulk.