Cite
HARVARD Citation
Olivera, F. et al. (2018). Static noise margin trade-offs for 6T-SRAM cell sizing in 28 nm UTBB FD-SOI CMOS technology. Microelectronics journal. pp. 94-100. [Online].
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Olivera, F. et al. (2018). Static noise margin trade-offs for 6T-SRAM cell sizing in 28 nm UTBB FD-SOI CMOS technology. Microelectronics journal. pp. 94-100. [Online].