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HARVARD Citation
Bag, A. et al. (2018). Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics. CrystEngComm. 20 (29), pp. 4151-4163. [Online].
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Bag, A. et al. (2018). Evolution of lateral V-defects on InGaN/GaN on Si(111) during PAMBE: the role of strain on defect kinetics. CrystEngComm. 20 (29), pp. 4151-4163. [Online].