A novel combined experimental and multiscale theoretical approach to unravel the structure of SiC/SiOx core/shell nanowires for their optimal design. Issue 28 (4th July 2018)

• Record Type: Journal Article
• Authors: Morresi, Tommaso; Timpel, Melanie; Pedrielli, Andrea; Garberoglio, Giovanni; Tatti, Roberta; Verucchi, Roberto; Pasquali, Luca; Pugno, Nicola Maria; Nardi, Marco Vittorio; Taioli, Simone
• Is Part Of: Nanoscale. Volume 10:Issue 28(2018)
• Page Start: 13449
• Page End: 13461
• Publication Date: 2018-07-04
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c8nr03712d
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : A realistic model of SiC/SiOx core/shell nanowires to reproduce XAS spectra. Abstract : In this work we propose a realistic model of nanometer-thick SiC/SiO x core/shell nanowires (NWs) using a combined first-principles and experimental approach. SiC/SiO x core/shell NWs were first synthesised by a low-cost carbothermal method and their chemical–physical experimental analysis was accomplished by recording X-ray absorption near-edge spectra. In particular, the K-edge absorption lineshapes of C, O, and Si are used to validate our computational model of the SiC/SiO x core/shell NW architectures, obtained by a multiscale approach, including molecular dynamics, tight-binding and density functional simulations. Moreover, we present ab initio calculations of the electronic structure of hydrogenated SiC and SiC/SiO x core/shell NWs, studying the modification induced by several different substitutional defects and impurities into both the surface and the interfacial region between the SiC core and the SiO x shell. We find that on the one hand the electron quantum confinement results in a broadening of the band gap, while hydroxyl surface terminations decrease it. This computational investigation shows that our model of SiC/SiO x core/shell NWs is capable to deliver an accurate interpretation of the recorded X-ray absorption near-edge spectra and proves to be a valuable tool towards the optimal design and application of these nanosystems in actual devices.