Cite
HARVARD Citation
Zhou, W. et al. (2018). 2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning. Nanoscale. 10 (28), pp. 13767-13772. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Zhou, W. et al. (2018). 2D SnSe-based vdW heterojunctions: tuning the Schottky barrier by reducing Fermi level pinning. Nanoscale. 10 (28), pp. 13767-13772. [Online].