Gate-tunable strong-weak localization transition in few-layer black phosphorus. (18th December 2017)

• Record Type: Journal Article
• Authors: Long, Gen; Xu, Shuigang; Cai, Xiangbin; Wu, Zefei; Han, Tianyi; Lin, Jiangxiazi; Cheng, Chun; Cai, Yuan; Wang, Xinran; Wang, Ning
• Is Part Of: Nanotechnology. Volume 29:Number 3(2018)
• Publication Date: 2017-12-18
• Subjects: black phosphorus -- strong localization -- weak localization -- variable-range hopping -- nearest-neighbor hopping; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/aa9bc1
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: Atomically-thin black phosphorus (BP) field-effect transistors show strong-weak localization transition, which is tunable through gate voltages. Hopping transports through charge impurity-induced localized states are observed at low carrier density regime. Variable-range hopping model is applied to simulate scattering behaviors of charge carriers. In the high carrier concentration regime, a negative magnetoresistance indicates weak localization effects. The extracted phase coherence length is power-law temperature-dependent ( ∼ T − 0.48±0.03 ) and demonstrates inelastic electron–electron interactions and the 2D transport features in few-layer BP field-effect devices. The competition between localization and phase coherence lengths is investigated and analyzed based on observed gate-tunable strong-weak localization transition in few-layer BP.