Inverse participation ratio and localization in topological insulator phase transitions. (23rd June 2015)

• Record Type: Journal Article
• Authors: Calixto, M; Romera, E
• Is Part Of: Journal of statistical mechanics. (2015:Jun.)
• Publication Date: 2015-06-23
• Subjects: 3 -- 9 -- 2; 3/170 -- 9/160 -- 9/180 -- 2/177; Statistical mechanics -- Periodicals; Mechanics -- Statistical methods -- Periodicals; 530.1305
• DOI: 10.1088/1742-5468/2015/06/P06029
• Languages: English
• ISSNs: 1742-5468

Abstract

Abstract: Fluctuations of Hamiltonian eigenfunctions, measured by the inverse participation ratio (IPR), turn out to characterize topological-band insulator transitions occurring in 2D Dirac materials like silicene, which is isostructural with graphene but with a strong spin–orbit interaction. Using monotonic properties of the IPR, as a function of a perpendicular electric field (which provides a tunable band gap), we define topological-like quantum numbers that take different values in the topological-insulator and band-insulator phases.