Draw Spinning of Wafer‐Scale Oxide Fibers for Electronic Devices. (30th April 2018)

• Record Type: Journal Article
• Authors: Liu, Ao; Zhu, Huihui; Liu, Guoxia; Noh, Yong‐Young; Fortunato, Elvira; Martins, Rodrigo; Shan, Fukai
• Is Part Of: Advanced Electronic Materials. Volume 4:Number 6(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-04-30
• Subjects: aligned arrays -- direct‐drawing -- field‐effect transistors -- oxide semiconducting fibers -- precise manipulation; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201700644
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: The fabrication of functionalized 1D oxide fibers with accurate control of orientation, location, and number is highly demanded and challengeable based on current techniques, which hinder their practical application in opto/electronic devices. Herein, a rapid and simple method is developed to directly draw the oxide fibers from its polymer solution over large area. The draw‐spinning method enables the accurate positioning of individual fiber and the construction of complex patterns, holding great potentials in fiber‐based electronics. The assembled field‐effect transistors (FETs) based on single indium oxide (In2 O3 ) fiber exhibit excellent current modulation capability with a high on/off current ratio of 10 6 . Adjusting the number of fibers within the channel, the device performance can be modulated. Moreover, the draw‐spinning technique is applied to fabricate highly aligned fiber arrays by using brush pen. The FETs based on aligned In2 O3 fiber arrays exhibit superior current‐driven capability compared with the devices with limited number of fibers. Their further integrations on high‐permittivity dielectric layer show improved device performance at an operating voltage of 4 V. This method is scalable and can be implemented easily to fabricate various functional fibers in both laboratory and industrial manufacturing. Abstract : The draw‐spinning technique is utilized to fabricate wafer‐scaled oxide fiber and aligned arrays for the first time. The assembled field‐effect transistors and inverters based on drawn oxide fibers exhibit high electrical performance. This method is very simple and does not require specially designed setup, which paves a way for the advanced functional nano/microstructures and low‐cost and large‐area electronic devices.