Synthesis of High‐Quality Wurtzite Cu2ZnSn(S1−x, Sex)4 Nanocrystals With Non‐Toxic Selenium Precursor and the Photoelectrochemical Performance of ZnO NAs/CZTSSe Heterojunction. Issue 7 (7th May 2018)

• Record Type: Journal Article
• Authors: Gao, Yao; Wang, Jilin; Mo, Shuyi; Wang, Fuwen; Long, Fei; Zou, Zhengguang
• Is Part Of: Solar RRL. Volume 2:Issue 7(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-05-07
• Subjects: heterojunction -- nanocrystals -- photoelectrochemical -- thin film -- W‐CZTSSe; Solar energy -- Periodicals; Photovoltaic power generation -- Periodicals; Solar energy -- Research -- Periodicals; Photovoltaic power generation -- Research -- Periodicals; Periodicals; 333.7923
• DOI: 10.1002/solr.201800015
• Languages: English
• ISSNs: 2367-198X

Abstract

Abstract : Fabrication of high performing CZTSSe absorber material from environmental benign nanocrystals ink is very important for large‐scale manufacturing production. Herein, the high‐quality metastable wurtzite Cu2 ZnSnS4 (W‐CZTS) and wurtzite Cu2 ZnSn(S1− x, Se x )4 (W‐CZTSSe) nanocrystals with small sizes have been synthesized successfully using dodecanethiol (DDT) and Se‐octadecylamine (Se‐ODA) as the sulfur and selenium sources, respectively. Compared to the thin film obtained from W‐CZTS nanocrystals ink, the thickness of small grain layer in the thin film obtained from W‐CZTSSe nanocrystals is reduced significantly. Further the ZnO nanoarrays (NAs)/CZTSSe heterojunction thin‐film grows on fluorine‐doped tin oxide (FTO) substrate and it exhibits superior photoelectrochemical (PEC) performance under light illumination. The ZnO NAs/CZTSSe heterojunction thin film shows the photocurrent density of 3.44 mA cm −2, which is nearly 2.7‐fold higher than the photocurrent density of ZnO NAs. The PEC efficiencies of ZnO NAs and ZnO NAs/CZTSSe are 0.4% and 1.89%, respectively. Our results demonstrate that the as‐synthesized W‐CZTSSe nanocrystals by using Se‐ODA are a promising precursor to fabricate high performing thin film, the Se‐ODA can be applied to prepare the precursors of chalcogenide thin film (including CISe, CIGSe, and CZTSSe). Abstract : W‐CZTSSe nanocrystals are synthesized by using non‐toxic Se‐ODA precursor. The key factor of forming W‐CZTSSe is the introduction of Se‐ODA. W‐CZTSSe precursor ink could significantly reduce the thickness of fine grains layer after selenization. The ZnO NAs/CZTSSe heterojunction shows an excellent PEC property. It shows a photocurrent density of 3.44 mA cm −2, which is nearly 3.7‐fold that of ZnO nanoarrays.