2D Tunnel Field Effect Transistors (FETs) with a Stable Charge‐Transfer‐Type p+‐WSe2 Source. (31st May 2018)

• Record Type: Journal Article
• Authors: He, Junyang; Fang, Nan; Nakamura, Keigo; Ueno, Keiji; Taniguchi, Takashi; Watanabe, Kenji; Nagashio, Kosuke
• Is Part Of: Advanced Electronic Materials. Volume 4:Number 7(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-05-31
• Subjects: 2D heterostructures -- band to band tunneling -- negative differential resistance -- subthreshold swing; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201800207
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: 2D materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distance and strong gate controllability can be expected from the van der Waals gap distance and the atomically sharp heterointerface formed independently of lattice matching. However, the common problem for 2D–2D TFETs is the lack of highly doped 2D materials with the high process stability as the sources. In this study, it is found that p + ‐WSe2 doped by charge transfer from a WO x surface oxide layer can be stabilized by transferring it onto an h ‐BN substrate. Using this p + ‐WSe2 as a source, all‐solid‐state 2D–2D heterostructure TFETs with an Al2 O3 top gate insulator, i.e., type‐II p + ‐WSe2 /MoS2 and type‐III p + ‐WSe2 /WSe2 are fabricated. The band‐to‐band tunneling and negative differential resistance trends are clearly demonstrated at low temperatures. This work suggests that high doped 2D crystal of the charge transfer type is an excellent choice as sources for TFETs. Abstract : Using the charge transfer type p + ‐WSe2 as a source, all‐solid‐state 2D–2D heterostructure tunnel field effect transistors with an Al2 O3 top gate insulator, i.e., type‐II p + ‐WSe2 /MoS2 and type‐III p + ‐WSe2 /WSe2 are fabricated. The band‐to‐band tunneling and negative differential resistance trends are clearly demonstrated at low temperatures.