Metal‐Semiconductor Contacts: Metallic Contact between MoS2 and Ni via Au Nanoglue (Small 22/2018). Issue 22 (28th May 2018)

• Record Type: Journal Article
• Authors: Shi, Xinying; Posysaev, Sergei; Huttula, Marko; Pankratov, Vladimir; Hoszowska, Joanna; Dousse, Jean‐Claude; Zeeshan, Faisal; Niu, Yuran; Zakharov, Alexei; Li, Taohai; Miroshnichenko, Olga; Zhang, Meng; Wang, Xiao; Huang, Zhongjia; Saukko, Sami; González, Diego López; van Dijken, Sebastiaan; Alatalo, Matti; Cao, Wei
• Is Part Of: Small. Volume 14:Issue 22(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-05-28
• Subjects: first‐principles calculations -- inorganic layered crystals -- metal‐semiconductor contact -- synchrotron radiation; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201870100
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : In article number1704526, Wei Cao and co‐workers realize a metallic contact between the Ni and layered MoS2 semiconductor by introducing gold nanobuffers, leading to a substantial decrease of electric resistivity at the M/S interface. Simultaneous microscopic and spectroscopic determinations prove the formation of Ni–Au–MoS2 ternary alloy subjected to a facile wet method synthesis. The metallic M/S contact and band alignment provide a potential for layered semiconductors in future electronics.