Solution Growth of Silicon Carbide Using the Vertical Bridgman Method. Issue 7 (29th April 2018)

• Record Type: Journal Article
• Authors: Fahlbusch, Lars; Wellmann, Peter J.
• Is Part Of: Crystal research and technology. Volume 53:Issue 7(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-04-29
• Subjects: high temperature growth -- silicon carbide -- solution growth -- vertical Bridgman; Crystallography -- Periodicals; 548
• DOI: 10.1002/crat.201800019
• Languages: English
• ISSNs: 0232-1300

Abstract

Abstract: A solution growth process combined of vertical Bridgman and vertical gradient freeze in a metal free Si‐C melt at growth temperatures of 2300 °C is developed. The influence of the growth parameters for different growth steps and of the surface polarity of the seed is investigated. The layers are evaluated by Raman spectroscopy, scanning electron microscopy and optical profilometry. The growth of high quality SiC layers with a diameter of 30 mm and a layer thickness up to 200 µm is achieved. Abstract : A solution growth process combined of vertical Bridgman and vertical gradient freeze in a metal free Si‐C melt at growth temperatures of 2300 °C is developed. A detailed description of the growth process and a discussion about the influence of different growth parameters on the surface morphology and growth rate is given. With optimization of the growth parameters a 200 µm thick layer with high crystal quality is achieved.