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HARVARD Citation
Yang, X. et al. (n.d.). Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage. Journal of semiconductors. p. . [Online].
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Yang, X. et al. (n.d.). Fabrication of 4H-SiC n-channel IGBTs with ultra high blocking voltage. Journal of semiconductors. p. . [Online].