Formation of in situ HVPE a-plane GaN nanodots: effects on the structural properties of a-plane GaN templates. Issue 28 (29th June 2018)

• Record Type: Journal Article
• Authors: Lee, Moonsang; Yang, Mino; Wi, Jung-Sub; Park, Sungsoo
• Is Part Of: CrystEngComm. Volume 20:Issue 28(2018)
• Page Start: 4036
• Page End: 4041
• Publication Date: 2018-06-29
• Subjects: Crystals -- Periodicals; Crystal growth -- Periodicals; Crystallography -- Periodicals; Cristaux -- Périodiques; Cristaux -- Croissance -- Périodiques; Cristallographie -- Périodiques; 548
• DOI: 10.1039/c8ce00583d
• Languages: English
• ISSNs: 1466-8033

Abstract

Abstract : In situ a -plane GaN nanodots were formed on r -plane sapphire substrates to obtain a -plane GaN layers by using hydride vapor phase epitaxy (HVPE). Abstract : In situ a -plane GaN nanodots were formed on r -plane sapphire substrates to obtain a -plane GaN layers by using hydride vapor phase epitaxy (HVPE). The size and density of the GaN nanodots influence the juncture of the 2D growth of a -plane GaN, thus determining the density of threading dislocations and stacking faults as well as the surface morphology in growing a -plane GaN layers. Faster agglomeration in a -plane GaN layers via GaN nanodots with small size and high density leads to a decrease in the density of threading dislocations. A higher number of grain boundaries formed by nanodots with small size and high density are also responsible for a reduction in the number of stacking faults. Furthermore, we infer that the reduced atomic migration length difference of Ga and N along the c -axis and m -axis directions in GaN nanodots formed at low growth temperatures improved the surface morphology of a -plane GaN layers via the formation of a -plane GaN islands with an isotropic shape. We believe that this approach will provide a simple and efficient way to control the structural defects and surface undulations of a -plane GaN layers without any complex processes or additional expense.