Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment. Issue 26 (21st June 2018)
- Record Type:
- Journal Article
- Title:
- Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment. Issue 26 (21st June 2018)
- Main Title:
- Enhancing electronic and optoelectronic performances of tungsten diselenide by plasma treatment
- Authors:
- Xie, Yuan
Wu, Enxiu
Hu, Ruixue
Qian, Shuangbei
Feng, Zhihong
Chen, Xuejiao
Zhang, Hao
Xu, Linyan
Hu, Xiaodong
Liu, Jing
Zhang, Daihua - Abstract:
- Abstract : Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. Abstract : Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2 -based devices by N2 O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm 2 V −1 s −1 and 2.2 × 10 12 cm −2, respectively, after the treatment. At the same time, the contact resistance ( R c ) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 10 5 A W −1 ), short response time (<2 ms), high detectivity (3.6 × 10 13 Jones) and very large photoconductive gain (>10 6 ). We have also built a lateral p–n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 10 6, an excellent photoresponsivity of 2.49 A W −1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2 O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devicesAbstract : Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. Abstract : Transition metal dichalcogenides (TMDCs) have recently become spotlighted as nanomaterials for future electronic and optoelectronic devices. In this work, we develop an effective approach to enhance the electronic and optoelectronic performances of WSe2 -based devices by N2 O plasma treatment. The hole mobility and sheet density increase by 2 and 5 orders of magnitude, reaching 110 cm 2 V −1 s −1 and 2.2 × 10 12 cm −2, respectively, after the treatment. At the same time, the contact resistance ( R c ) between WSe2 and its metal electrode drop by 5 orders of magnitude from 1.0 GΩ μm to 28.4 kΩ μm. The WSe2 photoconductor exhibits superior performance with high responsivity (1.5 × 10 5 A W −1 ), short response time (<2 ms), high detectivity (3.6 × 10 13 Jones) and very large photoconductive gain (>10 6 ). We have also built a lateral p–n junction on a single piece of WSe2 flake by selective plasma exposure. The junction reaches an exceedingly high rectifying ratio of 10 6, an excellent photoresponsivity of 2.49 A W −1 and a fast response of 8 ms. The enhanced optoelectronic performance is attributed to band-engineering through the N2 O plasma treatment, which can potentially serve as an effective and versatile approach for device engineering and optimization in a wide range of electronic and optoelectronic devices based on 2D materials. … (more)
- Is Part Of:
- Nanoscale. Volume 10:Issue 26(2018)
- Journal:
- Nanoscale
- Issue:
- Volume 10:Issue 26(2018)
- Issue Display:
- Volume 10, Issue 26 (2018)
- Year:
- 2018
- Volume:
- 10
- Issue:
- 26
- Issue Sort Value:
- 2018-0010-0026-0000
- Page Start:
- 12436
- Page End:
- 12444
- Publication Date:
- 2018-06-21
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c8nr02668h ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 6945.xml