A simple synthesis of transparent and highly conducting p-type CuxAl1−xSy nanocomposite thin films as the hole transporting layer for organic solar cells. Issue 30 (8th May 2018)

• Record Type: Journal Article
• Authors: Dai, Xin; Lei, Hongwei; Chen, Cong; Guo, Yaxiong; Fang, Guojia
• Is Part Of: RSC advances. Volume 8:Issue 30(2018)
• Page Start: 16887
• Page End: 16896
• Publication Date: 2018-05-08
• Subjects: Chemistry -- Periodicals; 540.5
• DOI: 10.1039/c8ra01299g
• Languages: English
• ISSNs: 2046-2069

Abstract

Abstract : Inorganic p-type films with high mobility are very important for opto-electronic applications. Abstract : Inorganic p-type films with high mobility are very important for opto-electronic applications. It is very difficult to synthesize p-type films with a wider, tunable band gap energy and suitable band energy levels. In this research, p-type copper aluminum sulfide (Cu x Al1− x S y ) films with tunable optical band gap, carrier density, hole mobility and conductivity were first synthesized using a simple, low cost and low temperature chemical bath deposition method. These in situ fabricated Cu x Al1− x S y films were deposited at 60 °C using an aqueous solution of copper(ii ) chloride dihydrate (CuCl2 ·2H2 O), aluminium nitrate nonohydrate [Al(NO3 )3 ·9H2 O], thiourea [(NH2 )2 CS], and ammonium hydroxide, with citric acid as the complexing agent. Upon varying the ratio of the precursor, the band gap of the Cu x Al1− x S y films can be tuned from 2.63 eV to 4.01 eV. The highest hole mobility obtained was 1.52 cm 2 V −1 s −1 and the best conductivity obtained was 546 S cm −1 . The Cu x Al1− x S y films were used as a hole transporting layer (HTL) in organic solar cells (OSCs), and a good performance of the OSCs was demonstrated using the Cu x Al1− x S y films as the HTL. These results demonstrate the remarkable potential of Cu x Al1− x S y as hole transport material for opto-electronic devices.