Electroless Deposition: Metal on Graphenated Metal for VLSI Interconnects (Adv. Mater. Interfaces 13/2018). Issue 13 (6th July 2018)

• Record Type: Journal Article
• Authors: Narula, Udit; Tan, Cher Ming; Tok, Eng Soon
• Is Part Of: Advanced materials interfaces. Volume 5:Issue 13(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-07-06
• Subjects: charge transfer -- chemical vapor deposition graphene -- electroless deposition; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201870062
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : Metal‐graphene‐metal (MGM) structure can be an important breakthrough for future very large‐scale integration (VLSI) interconnect applications. This cover shows a fabrication method of the MGM structure wherein mono‐layer graphene synthesized on metal acts as a reducing agent for electroless deposition of the metal without additional of other chemical species. The hydronium ions in acidic copper sulphate (CuSO4 ) electrolyte solution induce electrons in graphenated copper resulting in reduction of copper from the solution. This method can be applied to other metals depending on their electro‐chemical properties. More details can be found in article1800270 by Udit Narula, Cher Ming Tan, and Eng Soon Tok.