Detection of edge component of threading dislocations in GaN by Raman spectroscopy. (22nd May 2018)

• Record Type: Journal Article
• Authors: Kokubo, Nobuhiko; Tsunooka, Yosuke; Fujie, Fumihiro; Ohara, Junji; Hara, Kazukuni; Onda, Shoichi; Yamada, Hisashi; Shimizu, Mitsuaki; Harada, Shunta; Tagawa, Miho; Ujihara, Toru
• Is Part Of: Applied physics express. Volume 11:Number 6(2018)
• Publication Date: 2018-05-22
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.061002
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We succeeded in measuring the density and direction of the edge component of threading dislocations (TDs) in c -plane (0001) GaN by micro-Raman spectroscopy mapping. In the micro-Raman spectroscopy mapping of the E2 H peak shift between 567.85 and 567.75 cm −1, six different contrast images are observed toward directions of . By comparing X-ray topography and etch pit images, the E2 H peak shift is observed where the edge component of TDs exists. In contrast, the E2 H peak is not observed where the screw component of TDs exists.