Investigation of the evolution of nitrogen defects in flash-lamp-annealed InGaZnO films and their effects on transistor characteristics. (22nd May 2018)

• Record Type: Journal Article
• Authors: Eom, Tae-Yil; Ahn, Chee-Hong; Kang, Jun-Gu; Salman, Muhammad Saad; Lee, Sun-Young; Kim, Yong-Hoon; Lee, Hoo-Jeong; Kang, Chan-Mo; Kang, Chiwon
• Is Part Of: Applied physics express. Volume 11:Number 6(2018)
• Publication Date: 2018-05-22
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.11.061104
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: In this study, we show the evolution of nitrogen defects during a sol–gel reaction in flash-lamp-annealed InGaZnO (IGZO) films and their effects on the device characteristics of their thin-film transistors (TFTs). The flash lamp annealing (FLA) of the IGZO TFT for 16 s helps achieve a mobility of approximately 7 cm 2 V −1 s −1 . However, further extension of the annealing time results only in drastic increases in carrier concentration and off-current. The X-ray photoelectron spectroscopy (XPS) analysis of the N 1s peak unravels the presence of oxygen-vacancy-associated nitrogen defects and their evolution with annealing time, which is possibly responsible for the increase in carrier concentration.