Band alignment at a MgO/GaSb heterointerface using x-ray photoelectron spectroscopy measurements. (6th July 2016)

• Record Type: Journal Article
• Authors: Li, Ruxue; Wei, Zhipeng; Liu, Xue; Li, Yongfeng; Fang, Xuan; Tang, Jilong; Fang, Dan; Gao, Xian; Wang, Dengkui; Hao, Yongqin; Yao, Bin; Ma, Xiaohui; Wang, Xiaohua
• Is Part Of: Materials research express. Volume 3:Number 7(2016)
• Publication Date: 2016-07-06
• Subjects: GaSb -- MgO -- thin film -- heterostructure -- band offset -- atomic layer deposition; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/3/7/076402
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: The valence band offset (Δ E V ) of a MgO/GaSb heterostructure was determined using x-ray photoelectron spectroscopy measurements. A Δ E V value of 2.84 ± 0.10 eV was calculated by using Ga 3d3/2 and Mg 2p1/2 binding energies as references. Taking the empirical band gaps of 7.83 eV and 0.73 eV for MgO and GaSb thin films into consideration, respectively, we obtained the type-I band alignment of a MgO/GaSb heterostructure with a conduction band offset (Δ E c ) of 4.26 ± 0.10 eV, suggesting a nested interface band alignment.