Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks. (22nd July 2016)

• Record Type: Journal Article
• Authors: Reichlová, H; Novák, V; Kurosaki, Y; Yamada, M; Yamamoto, H; Nishide, A; Hayakawa, J; Takahashi, H; Maryško, M; Wunderlich, J; Marti, X; Jungwirth, T
• Is Part Of: Materials research express. Volume 3:Number 7(2016)
• Publication Date: 2016-07-22
• Subjects: tunneling anisotropic magnetoresistance -- exchange coupling -- antiferromagnet; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/3/7/076406
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: We investigate the thickness and temperature dependence of a series of Ni 0.8 Fe 0.2 /Ir 0.2 Mn 0.8 bilayer samples with varying thickness ratio of the ferromagnet/antiferromagnet ( t FM / t AFM ) in order to explore the exchange coupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices. Specific values of t FM / t AFM lead to four distinct scenarios with specific electric responses to moderate magnetic fields. The characteristic dependence of the measured TAMR signal on applied voltage allows us to confirm its persistence up to room temperature despite an overlapped contribution by a thermal magnetic noise.