Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters. (6th February 2015)

• Record Type: Journal Article
• Authors: Sadia, Cyril P.; Muldera, Joselito; Estacio, Elmer S.; Somintac, Armando S.; Salvador, Arnel A.; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko
• Is Part Of: Applied physics express. Volume 8:Number 3(2015:Mar.)
• Publication Date: 2015-02-06
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.035501
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensional growth mode. The scheme allows growth of a p-InAs layer 600 nm to 1.0 µm thick. Growth performed without GaAs and growth interruption resulted in decomposition of the p-InAs. When the scheme is used, the ensuing p-InAs first follows quasi-two-dimensional growth before favoring faceted islanding. Under 800-nm-wavelength femtosecond laser excitation, the p-InAs layer generates terahertz signals 70% of that of bulk p-InAs.