Transient characteristics of AlGaN/GaN high-electron-mobility transistor with bias-controllable field plate. (23rd February 2015)

• Record Type: Journal Article
• Authors: Mase, Suguru; Egawa, Takashi; Wakejima, Akio
• Is Part Of: Applied physics express. Volume 8:Number 3(2015:Mar.)
• Publication Date: 2015-02-23
• Subjects: Physics -- Periodicals; Technology -- Periodicals; 621.05
• DOI: 10.7567/APEX.8.036601
• Languages: English
• ISSNs: 1882-0778

Abstract

Abstract: The trapping and emission of carriers in the gate-to-drain region of an AlGaN/GaN high-electron-mobility transistor (HEMT) have been investigated using a bias-controllable field plate (CFP). Once an instantaneous positive CFP voltage is applied after bias stress in a transient drain current measurement, carrier trapping occurs, which can subsequently be observed as a drain current discontinuity. Numerical analysis of carrier trapping using the Shockley–Read–Hall process also provides a trapped carrier density of 5.1 × 10 12 cm −2 and an energy level of 0.6 eV.