Low‐Temperature‐Processed SiOx One Diode–One Resistor Crossbar Array and Its Flexible Memory Application. (30th April 2018)

• Record Type: Journal Article
• Authors: Yoon, Jongwon; Ji, Yongsung; Lee, Seoung‐Ki; Hyon, Jinho; Tour, James M.
• Is Part Of: Advanced Electronic Materials. Volume 4:Number 6(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-04-30
• Subjects: flexible memory -- nonvolatile memory -- one‐diode–one resistor arrays -- resistive random access memory -- silicon oxides; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201700665
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: The one diode–one resistor (1D–1R) crossbar array is a promising architecture for high‐density memory due to its excellent scalability and effective suppression of the sneak paths arising from the unselected neighboring cells. In particular, the low‐temperature fabrication process plays an important role in the demonstration of the 1D–1R device, affording compatibility with conventional semiconductor processes, as well as flexible memory applications. In this study, a 1D–1R crossbar memory array consisting of a nanoporous SiO x film and an oxide‐based diode is achieved using physical vapor deposition methods at low temperature. The fabricated devices show reliable memory operation with high rectification and on/off resistance ratios under low power consumption. In addition, the low‐temperature process enables the fabrication of a flexible 1D–1R crossbar memory array on a plastic substrate. The observed uniform and stable memory performance of the flexible device under mechanical deformation establishes the feasibility of this platform for future high‐density flexible nonvolatile memory applications. Abstract : A SiO x one diode–one resistor crossbar memory array is demonstrated and fabricated at low temperature (≤200 °C) achieving high rectification ratios, high I ON / I OFF ratios, low power consumption, and good retention/endurance characteristics. The developed low‐temperature process enables flexible memory applications with stable operation under a mechanical deformation.